INGAASP(1.3-MU-M)/INP VERTICAL-CAVITY SURFACE-EMITTING LASER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：17

作者：

YANG, L

WU, MC

TAI, K

TANBUNEK, T

LOGAN, RA

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.102619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report InGaAsP/InP vertical-cavity surface-emitting lasers (VCSELs) with an emission wavelength near 1.3 μm grown by metalorganic vapor phase epitaxy. The VCSEL structure contains a double-heterostructure cavity, a metal mirror, and a SiO2/Si dielectric stack (three pairs) mirror with a measured reflectivity of 98%. A threshold current as low as 5 mA for 15-μm-diam devices with a 1-μm-thick active layer at 77 K was achieved, which is close to the best reported value (6 mA) within the accuracy of the pulse measurement. The highest operating temperature was 220 K.

引用

页码：889 / 891

页数：3

共 7 条

[1] BURIED HETEROSTRUCTURE GAAS/GAALAS DISTRIBUTED BRAGG REFLECTOR SURFACE EMITTING LASER WITH VERY LOW THRESHOLD (5.2 MA) UNDER ROOM-TEMPERATURE CW CONDITIONS [J].