DOPING OF INP AND GAINAS WITH S DURING METALORGANIC VAPOR-PHASE EPITAXY

[1] BRAUNE H, 1951, Z NATURFORSCH, V69, P32

[2] CASEYHC, 1978, HETEROSTRUCTURE LA B

[3] GROWTH OF FE-DOPED SEMI-INSULATING INP BY MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) : 10 - 14

[4] GROWTH AND CHARACTERIZATION OF INP USING METALORGANIC CHEMICAL VAPOR-DEPOSITION AT REDUCED PRESSURE [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) : 76 - 82

[5] SAXTENA R, 1986, J CRYST GROWTH, V77, P591

[6] THE ROLE OF IMPURITIES IN III/V SEMICONDUCTORS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (01) : 91 - 100

[7] DOPING OF INP AND GAINAS DURING ORGANOMETALLIC VAPOR-PHASE EPITAXY USING DISILANE [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2874 - 2876

[1] BRAUNE H, 1951, Z NATURFORSCH, V69, P32

[2] CASEYHC, 1978, HETEROSTRUCTURE LA B

[3] GROWTH OF FE-DOPED SEMI-INSULATING INP BY MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) : 10 - 14

[4] GROWTH AND CHARACTERIZATION OF INP USING METALORGANIC CHEMICAL VAPOR-DEPOSITION AT REDUCED PRESSURE [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) : 76 - 82

[5] SAXTENA R, 1986, J CRYST GROWTH, V77, P591

[6] THE ROLE OF IMPURITIES IN III/V SEMICONDUCTORS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (01) : 91 - 100

[7] DOPING OF INP AND GAINAS DURING ORGANOMETALLIC VAPOR-PHASE EPITAXY USING DISILANE [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2874 - 2876