THE ROLE OF IMPURITIES IN III/V SEMICONDUCTORS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053

[2] AZOULAY R, 1982, J PHYSIQUE, V43, P192

[3] SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (5-6) : 613 - 618

[4] BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1

[5] BHAT R, 1982, I PHYS C SER, V63, P101

[6] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 10 - 23

[7] ZINC DOPING OF MOCVD GAAS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 44 - 47

[8] GLEW RW, 1982, I PHYS C SER, V63, P581

[9] Gottschalch V., 1974, Kristall und Technik, V9, P209, DOI 10.1002/crat.19740090304

[10] A NEW APPROACH TO THE GETTERING OF OXYGEN DURING THE GROWTH OF GAALAS BY LOW-PRESSURE MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 53 - 57

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053

[2] AZOULAY R, 1982, J PHYSIQUE, V43, P192

[3] SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (5-6) : 613 - 618

[4] BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1

[5] BHAT R, 1982, I PHYS C SER, V63, P101

[6] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 10 - 23

[7] ZINC DOPING OF MOCVD GAAS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 44 - 47

[8] GLEW RW, 1982, I PHYS C SER, V63, P581

[9] Gottschalch V., 1974, Kristall und Technik, V9, P209, DOI 10.1002/crat.19740090304

[10] A NEW APPROACH TO THE GETTERING OF OXYGEN DURING THE GROWTH OF GAALAS BY LOW-PRESSURE MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 53 - 57