DOPING OF INP AND GAINAS DURING ORGANOMETALLIC VAPOR-PHASE EPITAXY USING DISILANE

被引：11

作者：

WOELK, E

BENEKING, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 08期

关键词：

D O I：

10.1063/1.340945

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2874 / 2876

页数：3

共 13 条

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[10] SILICON DOPING USING DISILANE IN LOW-PRESSURE OMVPE OF GAAS [J].

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