SILICON DOPING USING DISILANE IN LOW-PRESSURE OMVPE OF GAAS

被引：36

作者：

SHIMAZU, M ^{[1
]}

KAMON, K ^{[1
]}

KIMURA, K ^{[1
]}

MASHITA, M ^{[1
]}

MIHARA, M ^{[1
]}

ISHII, M ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 83卷 / 03期

关键词：

The authors would like to thank Dr. J. Kobayashi and Dr. K. Ishida for the SIMS mea- surements and useful discussions. The present research is supported by the Agency of Industrial Science and Technology; Ministry of International Trade and Industry;

D O I：

10.1016/0022-0248(87)90294-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：327 / 333

页数：7

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