HYDROGENATED AMORPHOUS-SILICON PRODUCED BY PYROLYSIS OF DISILANE IN A HOT WALL REACTOR

被引：14

作者：

ASHIDA, Y

MISHIMA, Y

HIROSE, M

OSAKA, Y

KOJIMA, K

机构：

[1] HIROSHIMA UNIV,DEPT ELECT ENGN,HIGASHIHIROSHIMA 724,JAPAN

[2] HIROSHIMA UNIV,FAC INTEGRATED ARTS & SCI,HIROSHIMA 730,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 03期

关键词：

D O I：

10.1143/JJAP.23.L129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L129 / L131

页数：3

共 15 条

[1]

ASHIDA Y, 1984, UNPUB J APPL PHYS, V55

[2]

BOWERY M, 1971, P ROY SOC LOND A MAT, V321, P341

[3] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J].

BRODSKY, MH ;

FRISCH, MA ;

ZIEGLER, JF ;

LANFORD, WA .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :561-563

[4] AMORPHOUS SILICON SOLAR-CELL [J].

CARLSON, DE ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673

[5] PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].

ELLIS, FB ;

GORDON, RG ;

PAUL, W ;

YACOBI, BG .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :719-722

[6] HYDROGEN CONTENT OF A-GE-H AND A-SI-H AS DETERMINED BY IR SPECTROSCOPY, GAS EVOLUTION AND NUCLEAR-REACTION TECHNIQUES [J].

FANG, CJ ;

GRUNTZ, KJ ;

LEY, L ;

CARDONA, M ;

DEMOND, FJ ;

MULLER, G ;

KALBITZER, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :255-260

[7]

GAU SC, 1981, APPL PHYS LETT, V39, P463

[8] PHYSICAL-PROPERTIES OF AMORPHOUS CVD SILICON [J].

HIROSE, M .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :705-714

[9] DEFECTS IN PLASMA-DEPOSITED A-SI-H [J].

KNIGHTS, JC ;

LUCOVSKY, G ;

NEMANICH, RJ .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :393-403

[10] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J].

LECOMBER, PG ;

SPEAR, WE ;

GHAITH, A .

ELECTRONICS LETTERS, 1979, 15 (06) :179-181

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