PHYSICAL-PROPERTIES OF AMORPHOUS CVD SILICON

[1] AMORPHOUS-SILICON PHOTODETECTOR FOR PICOSECOND PULSES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 66 - 68

[2] BAN Y, 1973, SEMICONDUCTOR SILICO, P292

[3] KINETICS OF THE DEPOSITION OF SILICON BY SILANE PYROLYSIS AT LOW-TEMPERATURES AND ATMOSPHERIC-PRESSURE [J]. THIN SOLID FILMS, 1979, 60 (01) : 19 - 25

[4] INHIBITION OF SILICON GROWTH RATE DURING DEPOSITION OF ARSENIC-DOPED EPITAXIAL SILICON LAYERS ON SILICON BY PYROLYSIS OF SILANE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 149 - &

[5] ENERGY-DISTRIBUTION OF TRAPPING STATES IN POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1043 - 1047

[6] ELECTRONIC PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 377 - 382

[7] DEFECT COMPENSATION IN DOPED CVD AMORPHOUS-SILICON [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 297 - 302

[8] HIROSE M, 1977, AMORPHOUS LIQUID SEM, P352

[9] BORON DOPING OF HYDROGENATED SILICON THIN-FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L183 - L186

[10] MISHIMA T, 1980, J APPL PHYSICS, V51, P1157

[1] AMORPHOUS-SILICON PHOTODETECTOR FOR PICOSECOND PULSES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 66 - 68

[2] BAN Y, 1973, SEMICONDUCTOR SILICO, P292

[3] KINETICS OF THE DEPOSITION OF SILICON BY SILANE PYROLYSIS AT LOW-TEMPERATURES AND ATMOSPHERIC-PRESSURE [J]. THIN SOLID FILMS, 1979, 60 (01) : 19 - 25

[4] INHIBITION OF SILICON GROWTH RATE DURING DEPOSITION OF ARSENIC-DOPED EPITAXIAL SILICON LAYERS ON SILICON BY PYROLYSIS OF SILANE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 149 - &

[5] ENERGY-DISTRIBUTION OF TRAPPING STATES IN POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1043 - 1047

[6] ELECTRONIC PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 377 - 382

[7] DEFECT COMPENSATION IN DOPED CVD AMORPHOUS-SILICON [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 297 - 302

[8] HIROSE M, 1977, AMORPHOUS LIQUID SEM, P352

[9] BORON DOPING OF HYDROGENATED SILICON THIN-FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L183 - L186

[10] MISHIMA T, 1980, J APPL PHYSICS, V51, P1157