BORON DOPING OF HYDROGENATED SILICON THIN-FILMS

被引：67

作者：

MATSUDA, A

MATSUMURA, M

YAMASAKI, S

YAMAMOTO, H

IMURA, T

OKUSHI, H

IIZIMA, S

TANAKA, K

机构：

[1] TOA NENRYO KK,CHIYODA KU,TOKYO 100,JAPAN

[2] OSAKA UNIV,SUITA,OSAKA 565,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.20.L183

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L183 / L186

页数：4

共 7 条

[1] FACTORS INFLUENCING THE EFFICIENCY OF AMORPHOUS-SILICON SOLAR-CELLS
CARLSON, DE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 707 - 717
[2] PREPARATION AND CHARACTERIZATION OF REACTIVELY-SPUTTERED AMORPHOUS SI - H FILMS
IIZIMA, S
OKUSHI, H
MATSUDA, A
YAMASAKI, S
NAKAGAWA, K
MATSUMURA, M
TANAKA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 521 - 526
[3] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SI-F-H ALLOYS
MADAN, A
OVSHINSKY, SR
BENN, E
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (04): : 259 - 277
[4] ELECTRICAL AND STRUCTURAL-PROPERTIES OF PHOSPHOROUS-DOPED GLOW-DISCHARGE SI-F-H AND SI-H FILMS
MATSUDA, A
YAMASAKI, S
NAKAGAWA, K
OKUSHI, H
TANAKA, K
IIZIMA, S
MATSUMURA, M
YAMAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L305 - L308
[5] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE
SPEAR, WE
LECOMBER, PG
[J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949
[6] TANAKA K, 1980, 12TH P C SOL STAT DE
[7] CHARACTERIZATION OF AMORPHOUS SEMICONDUCTING SILICON BORON ALLOYS PREPARED BY PLASMA DECOMPOSITION
TSAI, CC
[J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2041 - 2055