PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY CHEMICAL VAPOR-DEPOSITION

被引：3

作者：

ELLIS, FB

GORDON, RG

PAUL, W

YACOBI, BG

机构：

[1] HARVARD UNIV,DEPT CHEM,CAMBRIDGE,MA 02138

[2] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90272-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：719 / 722

页数：4

共 6 条

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ACHARYA, HN ;

DUTTA, SK ;

BANERJEE, HD .

SOLAR ENERGY MATERIALS, 1980, 3 (03) :441-445

[2]

ELLIS FB, J APPL PHYS

[3] THERMAL DEHYDROGENATION OF GLOW-DISCHARGE A-SI [J].

JOHN, P ;

ODEH, M ;

THOMAS, MJK ;

TRICKER, MJ ;

MCGILL, J ;

WALLACE, A ;

WILSON, JIB .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :237-241

[4]

MALEY N, 1983, B AM PHYS SOC, V28, P532

[5] PROPERTIES OF AMORPHOUS HYDROGENATED SILICON, WITH SPECIAL EMPHASIS ON PREPARATION BY SPUTTERING [J].

PAUL, W ;

ANDERSON, DA .

SOLAR ENERGY MATERIALS, 1981, 5 (03) :229-316

[6] EFFECT OF OXYGEN ON THE OPTOELECTRONIC PROPERTIES OF AMORPHOUS HYDROGENATED SILICON [J].

YACOBI, BG ;

COLLINS, RW ;

MODDEL, G ;

VIKTOROVITCH, P ;

PAUL, W .

PHYSICAL REVIEW B, 1981, 24 (10) :5907-5912

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