PROPERTIES OF AMORPHOUS HYDROGENATED SILICON, WITH SPECIAL EMPHASIS ON PREPARATION BY SPUTTERING

被引:176
作者
PAUL, W
ANDERSON, DA
机构
来源
SOLAR ENERGY MATERIALS | 1981年 / 5卷 / 03期
关键词
D O I
10.1016/0165-1633(81)90001-0
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
引用
收藏
页码:229 / 316
页数:88
相关论文
共 308 条
[1]   EXPONENTIAL ABSORPTION-EDGE IN HYDROGENATED A-SI FILMS [J].
ABELES, B ;
WRONSKI, CR ;
TIEDJE, T ;
CODY, GD .
SOLID STATE COMMUNICATIONS, 1980, 36 (06) :537-540
[2]   PICOSECOND RELAXATION OF OPTICALLY INDUCED ABSORPTION IN AMORPHOUS-SEMICONDUCTORS [J].
ACKLEY, DE ;
TAUC, J ;
PAUL, W .
PHYSICAL REVIEW LETTERS, 1979, 43 (10) :715-718
[3]   DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D .
PHYSICAL REVIEW LETTERS, 1978, 41 (25) :1755-1758
[4]   DEFECTS IN AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :819-824
[5]  
Adler D., 1971, Critical Reviews in Solid State Sciences, V2, DOI 10.1080/10408437108243545
[6]   THEORY OF AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D .
SOLAR CELLS, 1980, 2 (03) :199-226
[7]  
ADLER D, 1981, FUNDAMENTAL PHYSICS
[8]  
ALLAN D, 1977, 7TH P INT C AM LIQ S, P323
[9]  
ALLAN DC, 1980, PHYS REV LETT, V44, P43, DOI 10.1103/PhysRevLett.44.43
[10]  
ALLISON J, 1980, 3RD P EUR PHOT C CAN