Room temperature continuous-wave photopumped operation of 1.22 mu m GaInNAs/GaAs single quantum well vertical-cavity surface-emitting laser

被引：36

作者：

Larson, MC

Kondow, M

Kitatani, T

Yazawa, Y

Okai, M

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji-shi, Tokyo 185

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 11期

关键词：

vertical cavity surface emitting lasers; semiconductor junction lasers;

D O I：

10.1049/el:19970636

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photopumped operation of a vertical-cavity surface-emitting laser using a single GaInNAs/GaAs quantum well active layer is demonstrated for the first time. The device lases at continuous-wave at room temperature, with an active wavelength of 1.22 mu m and a threshold pump intensity of 3-5 kW/cm(2), for an equivalent current density of 2-3 kA/cm(2).

引用

页码：959 / 960

页数：2

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