Continuous-wave operation up to 36 degrees C of 1.3-mu m GaInAsP-InP vertical-cavity surface-emitting lasers

被引：55

作者：

Uchiyama, S

Yokouchi, N

Ninomiya, T

机构：

[1] Optoelectronics Furukawa Laboratory, Real World Computing Partnership, Furukawa Electric Company, Ltd., Nishi-ku, Yokohama 220

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 02期

关键词：

semiconductor lasers; vertical-cavity surface-emitting lasers (VCSEL's);

D O I：

10.1109/68.553065

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We introduced ion-beam assisted deposition in order to improve the quality of Al2O3 and SiO2, which were used as part of the mirrors of 1.3-mu m GaInAsP-InP vertical-cavity surface-emitting lasers (VCSEL's), The refractive index of Al2O3 was improved to 1.63 from 1.56 and the one of SiO2 increased to 1.47 from 1.45, Low-threshold room-temperature continuous-wave (CW) operation of 1.3-mu m VCSEL with the improved mirrors was demonstrated, The threshold current was 2.4 mA at 20 degrees C, The CW operating temperature was raised to 36 degrees C, which is a record high temperature for 1.3-mu m VCSEL.

引用

页码：141 / 142

页数：2

共 8 条

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