Low threshold room temperature continuous wave operation of 1.3 mu m GaInAsP/InP strained layer multiquantum well surface emitting laser

被引：6

作者：

Uchiyama, S

Yokouchi, N

Ninomiya, T

机构：

[1] Optoelectronics Furukawa Laboratory, Real World Computing Partnership, Furukawa Electric Co., Ltd., Nishi-ku, Yokohama 220

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 11期

关键词：

vertical cavity surface emitting lasers; semiconductor junction lasers; semiconductor quantum wells;

D O I：

10.1049/el:19960676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1.3 mu m GaInAsP/In strained-layer multiquantum well surface-emitting (SE) laser has been demonstrated. Room temperature continuous wave (CW) operation is obtained. The threshold current is 4.7mA, which is a record low value for a 1.3 mu m SE laser, at 20 degrees C. The highest CW operating temperature of 22 degrees C for a 1.3 mu m SE laser is also achieved.

引用

页码：1011 / 1013

页数：3

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