EFFECTS OF WELL NUMBER IN 1.3-MU-M GAINASP/INP GRIN-SCH STRAINED-LAYER QUANTUM-WELL LASERS

被引：26

作者：

NAMEGAYA, T

MATSUMOTO, N

YAMANAKA, N

IWAI, N

NAKAYAMA, H

KASUKAWA, A

机构：

[1] Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., Nishi-ku

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 02期

关键词：

D O I：

10.1109/3.283806

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effects of well number in 1.3-mum GaInAsP/InP GRIN-SCH compressively strained-layer quantum-well lasers were investigated from the viewpoint of the crystal quality of the strained-layer quantum wells and low threshold current operation at high temperature. As a result, we find that the optimum well number that gives the minimum threshold current increases with operating temperature and it was limited to the degradation of crystal quality of the quantum wells due to the critical thickness. A very high CW operating temperature of 170-degrees-C was obtained. A very high output power of over 300 mW was also achieved.

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页码：578 / 584

页数：7

相关论文

共 26 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].

ADAMS, AR .

ELECTRONICS LETTERS, 1986, 22 (05) :249-250

[2] GAIN AND INTERVALENCE BAND ABSORPTION IN QUANTUM-WELL LASERS [J].

ASADA, M ;

KAMEYAMA, A ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (07) :745-753

[3]

Casey Jr H. C., 1978, HETEROSTRUCTURE LASE, P71

[4] ANALYSIS OF CURRENT INJECTION EFFICIENCY OF SEPARATE-CONFINEMENT-HETEROSTRUCTURE QUANTUM-FILM LASERS [J].

HIRAYAMA, H ;

MIYAKE, Y ;

ASADA, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (01) :68-74

[5] HIGH-POWER 1.48 MU-M MULTIPLE QUANTUM-WELL LASERS WITH STRAINED QUATERNARY WELLS ENTIRELY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

JOMA, M ;

HORIKAWA, H ;

MATSUI, Y ;

KAMIJOH, T .

APPLIED PHYSICS LETTERS, 1991, 58 (20) :2220-2222

[6] EXPERIMENTAL-DETERMINATION OF THE INFLUENCE OF GAIN SATURATION ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN SHORT ALGAAS-GAAS QUANTUM-WELL LASERS [J].

JUNG, H ;

SCHLOSSER, E ;

DEUFEL, R .

APPLIED PHYSICS LETTERS, 1992, 60 (04) :401-403

[7] 1.3 MU-M GAINASP-INP BURIED HETEROSTRUCTURE GRADED INDEX SEPARATE CONFINEMENT MULTIPLE QUANTUM WELL (BH-GRIN-SC-MQW) LASERS ENTIRELY GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD) [J].

KASUKAWA, A ;

IMAJO, Y ;

MAKINO, T .

ELECTRONICS LETTERS, 1989, 25 (02) :104-105

[8] LOW THRESHOLD HIGHLY EFFICIENT STRAINED QUANTUM-WELL LASERS AT 1.5 MICROMETER WAVELENGTH [J].

KOREN, U ;

ORON, M ;

YOUNG, MG ;

MILLER, BI ;

DEMIGUEL, JL ;

RAYBON, G ;

CHIEN, M .

ELECTRONICS LETTERS, 1990, 26 (07) :465-467

[9] EFFECTS OF WELL NUMBER, CAVITY LENGTH, AND FACET REFLECTIVITY ON THE REDUCTION OF THRESHOLD CURRENT OF GAAS/ALGAAS MULTIQUANTUM WELL LASERS [J].

KUROBE, A ;

FURUYAMA, H ;

NARITSUKA, S ;

SUGIYAMA, N ;

KOKUBUN, Y ;

NAKAMURA, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (04) :635-639

[10] LOW THRESHOLD CURRENT, HIGH QUANTUM EFFICIENCY 1.5-MU-M GAINAS-GAINAASP GRIN-SCH SINGLE QUANTUM-WELL LASER-DIODES [J].

MATSUMOTO, N ;

KASUKAWA, A ;

NAMEGAYA, T ;

OKAMOTO, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1790-1793