LOW-THRESHOLD, ROOM-TEMPERATURE PULSED OPERATION OF 1.5-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH AN OPTIMIZED MULTIQUANTUM-WELL ACTIVE LAYER

被引：32

作者：

UOMI, K ^{[1
]}

YOO, SJB ^{[1
]}

SCHERER, A ^{[1
]}

BHAT, R ^{[1
]}

ANDREADAKIS, NC ^{[1
]}

ZAH, CE ^{[1
]}

KOZA, MA ^{[1
]}

LEE, TP ^{[1
]}

机构：

[1] BELL COMMUN RES INC,RED BANK,NJ 07701

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 03期

关键词：

D O I：

10.1109/68.275476

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature, pulsed operation of 1.5 mum vertical-cavity surface-emitting laser is demonstrated by the optimization of an InGaAs/InGaAsP multi-quantum well active layer, especially the number of quantum wells and the barrier thickness considering matched gain effect. Low threshold currents of 17 mA in 5 x 7 mum2-devices and 25 mA in 7 x 10 mum2-devices were achieved.

引用

页码：317 / 319

页数：3

共 13 条

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