FABRICATION OF LOW THRESHOLD VOLTAGE MICROLASERS

被引：22

作者：

SCHERER, A ^{[1
]}

JEWELL, JL ^{[1
]}

WALTHER, M ^{[1
]}

HARBISON, JP ^{[1
]}

FLOREZ, LT ^{[1
]}

机构：

[1] PHOTON RES INC,BROOMFIELD,CO 80021

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 13期

关键词：

LASERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19920773

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical cavity surface emitting lasers (VCSELs) with threshold voltages of 1.7 V have been fabricated. The resistance-area product in these new vertical cavity lasers is comparable to that of edge-emitting lasers, and threshold currents as low as 3 mA have been measured. Molecular beam epitaxy was used to grow n-type mirrors, a quantum well active region, and a heavily Be-doped p-contact. After contact definition and alloying, passive high-reflectivity mirrors were deposited by reactive sputter deposition of SiO2/Si3N4 to complete the laser cavity.

引用

页码：1224 / 1226

页数：3

共 4 条

[1] LOW-THRESHOLD ELECTRICALLY PUMPED VERTICAL-CAVITY SURFACE-EMITTING MICROLASERS
JEWELL, JL
SCHERER, A
MCCALL, SL
LEE, YH
WALKER, S
HARBISON, JP
FLOREZ, LT
[J]. ELECTRONICS LETTERS, 1989, 25 (17) : 1123 - 1124
[2] VERTICAL-CAVITY SURFACE-EMITTING LASERS - DESIGN, GROWTH, FABRICATION, CHARACTERIZATION
JEWELL, JL
HARBISON, JP
SCHERER, A
LEE, YH
FLOREZ, LT
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1332 - 1346
[3] SCHERER A, 1992, IN PRESS REACTIVE SP
[4] LOW-THRESHOLD VERTICAL CAVITY SURFACE-EMITTING LASERS WITH METALLIC REFLECTORS
SCHUBERT, EF
TU, LW
KOPF, RF
ZYDZIK, GJ
DEPPE, DG
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (02) : 117 - 119

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