LOW-THRESHOLD VERTICAL CAVITY SURFACE-EMITTING LASERS WITH METALLIC REFLECTORS

被引:14
作者
SCHUBERT, EF
TU, LW
KOPF, RF
ZYDZIK, GJ
DEPPE, DG
机构
[1] AT and T Bell Laboratories, Murray Hill, NJ 07974
关键词
D O I
10.1063/1.103960
中图分类号
O59 [应用物理学];
学科分类号
摘要
Continuous-wave room-temperature operation is reported for the first time of vertical cavity current injection semiconductor lasers with a metallic reflector. The GaAs/(AlGa)As lasers have low-threshold currents of 8 mA for 8-μm-diam contacts and threshold current densities of 9.5 kA/cm2. Single longitudinal mode and bimodal operation are obtained for short and long Fabry-Perot étalons, respectively. The spectral width of the single-mode laser line is 0.1 Å. The laser structures have a very small series resistance which results in a voltage drop of 1.8 V along the diodes at lasing threshold.
引用
收藏
页码:117 / 119
页数:3
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共 12 条
  • [1] ALGAAS-GAAS AND ALGAAS-GAAS-INGAAS VERTICAL CAVITY SURFACE EMITTING LASERS WITH AG MIRRORS
    DEPPE, DG
    CHO, AY
    HUANG, KF
    FISCHER, RJ
    TAI, K
    SCHUBERT, EF
    CHEN, JF
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) : 5629 - 5631
  • [2] DUTTA NK, IN PRESS J APPL PHYS
  • [3] FISCHER R, UNPUB
  • [4] HIGH-EFFICIENCY TEM00 CONTINUOUS-WAVE (AL,GA)AS EPITAXIAL SURFACE-EMITTING LASERS AND EFFECT OF HALF-WAVE PERIODIC GAIN
    GOURLEY, PL
    BRENNAN, TM
    HAMMONS, BE
    CORZINE, SW
    GEELS, RS
    YAN, RH
    SCOTT, JW
    COLDREN, LA
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (13) : 1209 - 1211
  • [5] VERTICAL CAVITY SINGLE QUANTUM WELL LASER
    JEWELL, JL
    HUANG, KF
    TAI, K
    LEE, YH
    FISCHER, RJ
    MCCALL, SL
    CHO, AY
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (05) : 424 - 426
  • [6] ROOM-TEMPERATURE CONTINUOUS WAVE LASING CHARACTERISTICS OF A GAAS VERTICAL CAVITY SURFACE-EMITTING LASER
    KOYAMA, F
    KINOSHITA, S
    IGA, K
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (03) : 221 - 222
  • [7] FABRICATION OF MICROLASERS AND MICRORESONATOR OPTICAL SWITCHES
    SCHERER, A
    JEWELL, JL
    LEE, YH
    HARBISON, JP
    FLOREZ, LT
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (26) : 2724 - 2726
  • [8] DELTA-DOPED OHMIC CONTACTS TO N-GAAS
    SCHUBERT, EF
    CUNNINGHAM, JE
    TSANG, WT
    CHIU, TH
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (05) : 292 - 294
  • [9] GAINASP-INP SURFACE EMITTING INJECTION-LASERS
    SODA, H
    IGA, K
    KITAHARA, C
    SUEMATSU, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) : 2329 - 2330
  • [10] ROOM-TEMPERATURE CONTINUOUS-WAVE VERTICAL-CAVITY SURFACE-EMITTING GAAS INJECTION-LASERS
    TAI, K
    FISCHER, RJ
    SEABURY, CW
    OLSSON, NA
    HUO, TCD
    OTA, Y
    CHO, AY
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (24) : 2473 - 2475