VERTICAL CAVITY SINGLE QUANTUM WELL LASER

[1] ULTRALOW-THRESHOLD GRADED-INDEX SEPARATE-CONFINEMENT SINGLE QUANTUM-WELL BURIED HETEROSTRUCTURE (AL,GA)AS LASERS WITH HIGH REFLECTIVITY COATINGS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1773 - 1775

[2] PICOSECOND PULSES FROM AN OPTICALLY PUMPED RIBBON-WHISKER LASER [J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 369 - 370

[3] CRITICAL LAYER THICKNESS IN IN0.2GA0.8AS/GAAS SINGLE STRAINED QUANTUM-WELL STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 1004 - 1006

[4] GEELS R, 1988, CLEO 88 TECHNICAL DI

[5] VISIBLE, ROOM-TEMPERATURE, SURFACE-EMITTING LASER USING AN EPITAXIAL FABRY-PEROT RESONATOR WITH ALGAAS/ALAS QUARTER-WAVE HIGH REFLECTORS AND ALGAAS/GAAS MULTIPLE QUANTUM-WELLS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1225 - 1227

[6] OPTICAL STUDIES OF INXGA1-XAS/GAAS STRAINED-LAYER QUANTUM WELLS [J]. APPLIED PHYSICS LETTERS, 1989, 54 (20) : 2026 - 2028

[7] ROOM-TEMPERATURE PSEUDOMORPHIC INXGA1-XAS/GAAS QUANTUM WELL SURFACE-EMITTING LASERS AT 0.94-1.0-MU-M WAVELENGTHS [J]. APPLIED PHYSICS LETTERS, 1989, 54 (22) : 2192 - 2194

[8] GAAS-ALAS MONOLITHIC MICRORESONATOR ARRAYS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 94 - 96

[9] HIGH-FINESSE (AL,GA)AS INTERFERENCE FILTERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 53 (08) : 640 - 642

[10] LASING CHARACTERISTICS OF GAAS MICRORESONATORS [J]. APPLIED PHYSICS LETTERS, 1989, 54 (15) : 1400 - 1402

[1] ULTRALOW-THRESHOLD GRADED-INDEX SEPARATE-CONFINEMENT SINGLE QUANTUM-WELL BURIED HETEROSTRUCTURE (AL,GA)AS LASERS WITH HIGH REFLECTIVITY COATINGS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1773 - 1775

[2] PICOSECOND PULSES FROM AN OPTICALLY PUMPED RIBBON-WHISKER LASER [J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 369 - 370

[3] CRITICAL LAYER THICKNESS IN IN0.2GA0.8AS/GAAS SINGLE STRAINED QUANTUM-WELL STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 1004 - 1006

[4] GEELS R, 1988, CLEO 88 TECHNICAL DI

[5] VISIBLE, ROOM-TEMPERATURE, SURFACE-EMITTING LASER USING AN EPITAXIAL FABRY-PEROT RESONATOR WITH ALGAAS/ALAS QUARTER-WAVE HIGH REFLECTORS AND ALGAAS/GAAS MULTIPLE QUANTUM-WELLS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1225 - 1227

[6] OPTICAL STUDIES OF INXGA1-XAS/GAAS STRAINED-LAYER QUANTUM WELLS [J]. APPLIED PHYSICS LETTERS, 1989, 54 (20) : 2026 - 2028

[7] ROOM-TEMPERATURE PSEUDOMORPHIC INXGA1-XAS/GAAS QUANTUM WELL SURFACE-EMITTING LASERS AT 0.94-1.0-MU-M WAVELENGTHS [J]. APPLIED PHYSICS LETTERS, 1989, 54 (22) : 2192 - 2194

[8] GAAS-ALAS MONOLITHIC MICRORESONATOR ARRAYS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 94 - 96

[9] HIGH-FINESSE (AL,GA)AS INTERFERENCE FILTERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 53 (08) : 640 - 642

[10] LASING CHARACTERISTICS OF GAAS MICRORESONATORS [J]. APPLIED PHYSICS LETTERS, 1989, 54 (15) : 1400 - 1402