ALGAAS-GAAS AND ALGAAS-GAAS-INGAAS VERTICAL CAVITY SURFACE EMITTING LASERS WITH AG MIRRORS

被引：7

作者：

DEPPE, DG

CHO, AY

HUANG, KF

FISCHER, RJ

TAI, K

SCHUBERT, EF

CHEN, JF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.343671

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5629 / 5631

页数：3

共 12 条

[1] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].

CASEY, HC ;

STERN, F .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643

[2]

FISCHER R, UNPUB

[3] VISIBLE, ROOM-TEMPERATURE, SURFACE-EMITTING LASER USING AN EPITAXIAL FABRY-PEROT RESONATOR WITH ALGAAS/ALAS QUARTER-WAVE HIGH REFLECTORS AND ALGAAS/GAAS MULTIPLE QUANTUM-WELLS [J].

GOURLEY, PL ;

DRUMMOND, TJ .

APPLIED PHYSICS LETTERS, 1987, 50 (18) :1225-1227

[4]

JEWELL JM, UNPUB

[5] ROOM-TEMPERATURE CONTINUOUS WAVE LASING CHARACTERISTICS OF A GAAS VERTICAL CAVITY SURFACE-EMITTING LASER [J].

KOYAMA, F ;

KINOSHITA, S ;

IGA, K .

APPLIED PHYSICS LETTERS, 1989, 55 (03) :221-222

[6] SURFACE EMITTING LASER DIODE WITH ALXGA1-XAS/GAAS MULTILAYERED HETEROSTRUCTURE [J].

OGURA, M ;

YAO, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :784-787

[7] GAINASP-INP SURFACE EMITTING INJECTION-LASERS [J].

SODA, H ;

IGA, K ;

KITAHARA, C ;

SUEMATSU, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) :2329-2330

[8]

SOKOLOV AV, 1967, OPTICAL PROPERTIES M, P231

[9]

SOKOLOV AV, 1967, OPTICAL PROPERTIES M, P229

[10] HIGH REFLECTIVITY GAAS-ALGAAS MIRRORS FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

THORNTON, RL ;

BURNHAM, RD ;

STREIFER, W .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1028-1030

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