SURFACE EMITTING LASER DIODE WITH ALXGA1-XAS/GAAS MULTILAYERED HETEROSTRUCTURE

被引：18

作者：

OGURA, M

YAO, T

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：784 / 787

页数：4

共 7 条

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SEMURA, S ;

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[2]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[3] GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE DISTRIBUTED-FEEDBACK DIODE LASERS [J].

NAKAMURA, M ;

AIKI, K ;

UMEDA, J ;

YARIV, A ;

YEN, HW ;

MORIKAWA, T .

APPLIED PHYSICS LETTERS, 1974, 25 (09) :487-488

[4]

NAMIZAKI H, 1974, J APPL PHYS, V45, P2785, DOI 10.1063/1.1663670

[5] DISTRIBUTED FEED BACK SURFACE EMITTING LASER DIODE WITH MULTILAYERED HETEROSTRUCTURE [J].

OGURA, M ;

HATA, T ;

YAO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (07) :L512-L514

[6]

OGURA M, 1982, JPN SOC APPL PHYS TO, P69

[7] MULTILAYER GAAS-AL0.3GA0.7AS DIELECTRIC QUARTER WAVE STACKS GROWN BY MOLECULAR-BEAM EPITAXY [J].

VANDERZIEL, JP ;

ILEGEMS, M .

APPLIED OPTICS, 1975, 14 (11) :2627-2630

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