1.3-mu m GaInAsP/InP multi-quantum-well surface-emitting lasers

被引：2

作者：

Uchiyama, S

Ninomiya, T

机构：

[1] Optoelectronics Furukawa Laboratory, Real World Computing Partnership, c/o Yokohama R and D Laboratories, Nishi-ku, Yokohama 220, 2-4-3, Okano

来源：

OPTICAL REVIEW | 1996年 / 3卷 / 02期

关键词：

surface emitting laser; multi-quantum well; low threshold current; buried heterostructure; Si/Al2O3; GaInAsP/InP;

D O I：

10.1007/s10043-996-0059-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A multi-quantum-well (MQW) active layer has been introduced to 1.3-mu m GaInAsP/InP surface-emitting (SE) lasers. Room temperature pulsed operation of a 1.3-mu m MQW SE laser was obtained for the first time and its threshold current was 15 mA. CW (continuous wave) operation up to 7 degrees C (threshold current I-th=7.6 mA at 7 degrees C) was achieved.

引用

页码：59 / 61

页数：3

共 9 条

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