CONSIDERATION ON THRESHOLD CURRENT-DENSITY OF GAINASP INP SURFACE EMITTING JUNCTION LASERS

被引：23

作者：

UCHIYAMA, S

IGA, K

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1986年 / 22卷 / 02期

关键词：

D O I：

10.1109/JQE.1986.1072955

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：302 / 309

页数：8

共 21 条

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[2]

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[4]

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[5] LASING CHARACTERISTICS OF IMPROVED GAINASP-INP SURFACE EMITTING INJECTION-LASERS [J].

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[6] ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS GAAS SURFACE EMITTING INJECTION-LASER [J].

IGA, K ;

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APPLIED PHYSICS LETTERS, 1984, 45 (04) :348-350

[7] CHEMICAL ETCHING OF INP AND GAINASP FOR FABRICATING LASER-DIODES AND INTEGRATED OPTICAL CIRCUITS [J].

KAMBAYASH, T ;

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[8]

KOTAKI Y, 1984, 16 C SOL STAT DEV MA, P133

[9] SURFACE-EMITTING GAINASP INP INJECTION-LASER WITH SHORT CAVITY LENGTH [J].

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[10]

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