1.3-mu m vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors

被引：29

作者：

Qian, Y

Zhu, ZH

Lo, YH

Hou, HQ

Wang, MC

Lin, W

机构：

[1] SANDIA NATL LABS,DEPT SEMICOND MAT,ALBUQUERQUE,NM 87185

[2] CHANG GUNG MED COLL,DEPT ELECT ENGN,TAIPEI,TAIWAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 01期

基金：

美国国家科学基金会;

关键词：

VCSEL's; semiconductor lasers; wafer bonding; long wavelength; optical data interconnects; optical communications;

D O I：

10.1109/68.554153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate, for the first time, double-bonded AlGaInAs strain-compensated quantum-well 1.3-mu m vertical-cavity surface-emitting lasers (VCSEL's). GaAs-AlAs Bragg mirrors were wafer-bonded on both sides of a cavity containing the AlGaInAs strain-compensated multiple-quantum-well active layers sandwiched by two InP layers, The lasers have operated under pulsed conditions at room temperature, A record low pulsed threshold current density of 4.2 kA/cm(2) and a highest maximum light output power greater than 4.6 mW have been achieved, The maximum threshold current characteristic temperature T-0 of 132 K is the best for any long wavelength VCSEL's. The laser operated in a single-longitudinal mode, with a side-mode suppression ratio of more than 40 dB, which is the best results for 1.3-mu m VCSEL's.

引用

页码：8 / 10

页数：3

共 8 条

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