Growth and characterization of small band gap (∼0.6 eV) InGaAsN layers on InP

We demonstrate the growth of small band gap (E (g)similar to 0.6 eV) strained and lattice matched single crystal InGaAsN alloys on InP substrates. InGaAsN layers with N concentrations varying from 0.6% to 3.25% were grown by gas source molecular beam epitaxy using a radio frequency plasma nitrogen source. Lattice-matched, 0.5-mu m-thick InGaAsN layers with smooth surface morphologies and abrupt interfaces were achieved. Low temperature photoluminescence measurements reveal a band gap emission wavelength of 1.9 mu m (at 20 K) for lattice matched InGaAsN (N similar to 2%). Tensile strained In0.53Ga0.47As/In0.53Ga0.47As0.994N0.006 multiple quantum wells emitting at 1.75 mu m at 20 K are also reported. (C) 1999 American Institute of Physics. [S0003-6951(99)04109-1].