Growth and characterization of small band gap (∼0.6 eV) InGaAsN layers on InP

被引:61
作者
Gokhale, MR [1 ]
Wei, J [1 ]
Wang, HS [1 ]
Forrest, SR [1 ]
机构
[1] Princeton Univ, Ctr Photon & Optoelect Mat, Dept Elect Engn, Princeton, NJ 08544 USA
关键词
D O I
10.1063/1.123526
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate the growth of small band gap (E (g)similar to 0.6 eV) strained and lattice matched single crystal InGaAsN alloys on InP substrates. InGaAsN layers with N concentrations varying from 0.6% to 3.25% were grown by gas source molecular beam epitaxy using a radio frequency plasma nitrogen source. Lattice-matched, 0.5-mu m-thick InGaAsN layers with smooth surface morphologies and abrupt interfaces were achieved. Low temperature photoluminescence measurements reveal a band gap emission wavelength of 1.9 mu m (at 20 K) for lattice matched InGaAsN (N similar to 2%). Tensile strained In0.53Ga0.47As/In0.53Ga0.47As0.994N0.006 multiple quantum wells emitting at 1.75 mu m at 20 K are also reported. (C) 1999 American Institute of Physics. [S0003-6951(99)04109-1].
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页码:1287 / 1289
页数:3
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