Growth and characterization of small band gap (∼0.6 eV) InGaAsN layers on InP

被引：61

作者：

Gokhale, MR ^{[1
]}

Wei, J ^{[1
]}

Wang, HS ^{[1
]}

Forrest, SR ^{[1
]}

机构：

[1] Princeton Univ, Ctr Photon & Optoelect Mat, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 09期

关键词：

D O I：

10.1063/1.123526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the growth of small band gap (E (g)similar to 0.6 eV) strained and lattice matched single crystal InGaAsN alloys on InP substrates. InGaAsN layers with N concentrations varying from 0.6% to 3.25% were grown by gas source molecular beam epitaxy using a radio frequency plasma nitrogen source. Lattice-matched, 0.5-mu m-thick InGaAsN layers with smooth surface morphologies and abrupt interfaces were achieved. Low temperature photoluminescence measurements reveal a band gap emission wavelength of 1.9 mu m (at 20 K) for lattice matched InGaAsN (N similar to 2%). Tensile strained In0.53Ga0.47As/In0.53Ga0.47As0.994N0.006 multiple quantum wells emitting at 1.75 mu m at 20 K are also reported. (C) 1999 American Institute of Physics. [S0003-6951(99)04109-1].

引用

页码：1287 / 1289

页数：3

共 20 条

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