共 20 条
- [1] GROWTH AND LUMINESCENCE PROPERTIES OF GAPN AND GAP1-XNX [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 829 - 831
- [3] N incorporation in GaP and band gap bowing of CaNxP1-x [J]. APPLIED PHYSICS LETTERS, 1996, 69 (24) : 3710 - 3712
- [4] HIGH-RESOLUTION X-RAY-DIFFRACTION STUDIES OF ALGAP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 754 - 757
- [5] BI WG, 1997, IN PRESS APPL PHYS L
- [7] Lattice-matched InAsN(X=0.38) on GaAs grown by molecular beam epitaxy [J]. III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 335 - 340
- [9] GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GANXAS1-X USING A N RADICAL AS THE N-SOURCE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (8A): : L1056 - L1058