HIGH-RESOLUTION X-RAY-DIFFRACTION STUDIES OF ALGAP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引:15
作者
BI, WG
DENG, F
LAU, SS
TU, CW
机构
[1] Univ of California, La Jolla
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期
关键词
D O I
10.1116/1.588155
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-resolution x-ray measurements have been performed to study the lattice deformation and the Al composition determination of AlGaP grown on (100) GaP by gas-source molecular-beam epitaxy. By using {511} asymmetric reflections, lattice constants in both the growth direction a⊥ and the growth plane direction a∥ were determined. The results show that the AlGaP unit cell deforms from cubic to tetragonal with a⊥ being larger than a∥, and that correlations are needed when using x-ray (400) reflection to determine the Al composition. By using the elastic theory and Rutherford backscattering spectrometry technique, the Al mole concentration and its relationship with the perpendicular lattice mismatch measured from x-ray (400) reflections have been determined.
引用
收藏
页码:754 / 757
页数:4
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