CHARACTERIZATION OF ALGAP/GAP HETEROSTRUCTURES GROWN BY MOVPE

被引：22

作者：

ADOMI, K

NOTO, N

NAKAMURA, A

TAKENAKA, T

机构：

[1] Isobe R and D Center, Shin-Etsu Handotai Co., Ltd., Annaka, Gunma, 379-01

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90519-O

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High quality AlxGa1-xP/GaP heteroepitaxial layers were grown by a barrel-type multiwafer metalorganic vapor phase epitaxy system. Fundamental aspects concerning the growth and the heterostructures, such as distribution coefficient of Al, critical layer thickness, doping properties, and band discontinuities at the heterojunctions, have been investigated.

引用

页码：570 / 575

页数：6

共 15 条

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