SHORT-PERIOD SUPERLATTICES OF (GAP)N(ALP)N GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

Short-period superlattices of (GaP)n(AlP)n have been grown by metalorganic vapor phase epitaxy. X-ray diffraction measurements have confirmed the formation of the structures, where n ranges from 4 to 10. Low-temperature photoluminescence has shown characteristic emission peaks, which shift toward higher energies and tend to increase in intensity with decreasing n. These results, together with the band discontinuity between GaP and AlP which was estimated from that between GaP and Al0.6Ga0.4P, strongly indicate that the (GaP)n(AlP)n system forms the superlattices of a type-II band alignment.