ELECTRONIC-STRUCTURE OF GAP-ALP(100) SUPER-LATTICES

被引：36

作者：

KIM, JY ^{[1
]}

MADHUKAR, A ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90007

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期

关键词：

D O I：

10.1116/1.571753

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：528 / 530

页数：3

共 9 条

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[4] MODULATED SEMICONDUCTOR STRUCTURES - AN OVERVIEW OF SOME BASIC CONSIDERATIONS FOR GROWTH AND DESIRED ELECTRONIC-STRUCTURE
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[5] TIGHT-BINDING STUDY OF ELECTRONIC-STRUCTURE OF INAS-GASB (001) SUPER-LATTICE
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[6] PLOOG K, 1980, CRYSTALS GROWTH PROP, V3, P73
[7] ELECTRONIC PROPERTIES OF THE ALAS-GAAS (001) INTERFACE AND SUPER-LATTICE
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[8] BAND-STRUCTURE AND OPTICAL-SPECTRUM OF AIP
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[9] WALDROP JR, 1979, PHYS REV LETT, V43, P1689