THE ELECTRONIC-STRUCTURE OF SI-GAP(110) INTERFACE AND SUPER-LATTICE

被引：17

作者：

MADHUKAR, A ^{[1
]}

DELGADO, J ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90007

来源：

关键词：

D O I：

10.1016/0038-1098(81)91013-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：199 / 203

页数：5

共 17 条

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[3] STUDY OF THE ELECTRONIC-STRUCTURE OF MODEL (110) SURFACES AND INTERFACES OF SEMI-INFINITE III-V COMPOUND SEMICONDUCTORS - THE GASB-INAS SYSTEM
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MADHUKAR, A
LOWY, DN
[J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5687 - 5705
[4] DANDEKAR NV, 1979, J VAC SC TECH, V16, P1365
[5] STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS
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SO, E
YEH, JL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1252 - 1257
[6] ELEMENTARY THEORY OF HETEROJUNCTIONS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1016 - 1021
[7] POLAR HETEROJUNCTION INTERFACES
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KRAUT, EA
WALDROP, JR
GRANT, RW
[J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4402 - 4410
[8] INTRINSIC AND EXTRINSIC INTERFACE STATES AT LATTICE MATCHED INTERFACES BETWEEN III-V COMPOUND SEMICONDUCTORS - THE INAS-GASB(110) SYSTEM
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DASSARMA, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1120 - 1127
[9] MADHUKAR A, UNPUBLISHED
[10] Pauling L., 1960, NATURE CHEM BOND