INTRINSIC AND EXTRINSIC INTERFACE STATES AT LATTICE MATCHED INTERFACES BETWEEN III-V COMPOUND SEMICONDUCTORS - THE INAS-GASB(110) SYSTEM

被引:9
作者
MADHUKAR, A [1 ]
DASSARMA, S [1 ]
机构
[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90007
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 05期
关键词
D O I
10.1116/1.570626
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1120 / 1127
页数:8
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