共 12 条
- [1] OBSERVATION OF SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1504 - 1505
- [2] ELECTRONIC-STRUCTURE OF SEMI-INFINITE III-V COMPOUND SEMICONDUCTOR SURFACES AND INTERFACES - APPLICATION TO INAS-GASB(110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1364 - 1369
- [3] DANDEKAR NV, PHYS REV B
- [5] TWO-DIMENSIONAL EFFECTS AND EFFECTIVE MASSES OF THE INAS-GASB (001) SUPER-LATTICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1507 - 1511
- [6] TIGHT-BINDING STUDY OF ELECTRONIC-STRUCTURE OF INAS-GASB (001) SUPER-LATTICE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1530 - 1534
- [7] THEORETICAL TRENDS IN ABRUPT (110) ALAS-GAAS, GE-GAAS, AND GE-ZNSE INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1437 - 1443
- [8] INAS-GASB SUPER-LATTICE ENERGY STRUCTURE AND ITS SEMICONDUCTOR-SEMI-METAL TRANSITION [J]. PHYSICAL REVIEW B, 1978, 18 (06): : 2812 - 2818
- [10] TIGHT-BINDING CALCULATION FOR ALAS-GAAS (100) INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1456 - 1458