BAND DISCONTINUITY FOR GAAS ALGAAS HETEROJUNCTION DETERMINED BY C-V PROFILING TECHNIQUE

被引：125

作者：

WATANABE, MO

YOSHIDA, J

MASHITA, M

NAKANISI, T

HOJO, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.334852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5340 / 5344

页数：5

共 16 条

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[10] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING [J].

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