共 25 条
[1]
[Anonymous], ELECTRONIC STRUCTURE
[3]
ELASTIC-CONSTANTS AND LATTICE ANHARMONICITY OF GASB AND GAP FROM ULTRASONIC-VELOCITY MEASUREMENTS BETWEEN 4.2 AND 300 K
[J].
PHYSICAL REVIEW B,
1975, 11 (08)
:2933-2940
[4]
TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1975, 68 (01)
:405-419
[5]
INTERBAND OPTICAL-TRANSITIONS IN GAAS-GA1-XALXAS AND INAS-GASB SUPERLATTICES
[J].
PHYSICAL REVIEW B,
1985, 31 (04)
:2069-2079
[6]
NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1976, 14 (02)
:556-582
[7]
DRUMMOND TJ, 1986, 13TH P INT S GALL AR, P331
[8]
X-POINT EXCITONS IN AIAS/GAAS SUPERLATTICES
[J].
APPLIED PHYSICS LETTERS,
1986, 49 (19)
:1299-1301
[10]
THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE
[J].
APPLIED PHYSICS,
1974, 3 (01)
:9-14