POSSIBILITY OF GREEN LIGHT-EMISSION FROM GAP/AIP(001) SUPERLATTICES

被引：15

作者：

SCHUURMANS, MFH

ROMPA, HWAM

EPPENGA, R

机构：

[1] Philips Research Lab, Eindhoven, Neth, Philips Research Lab, Eindhoven, Neth

来源：

JOURNAL OF LUMINESCENCE | 1987年 / 37卷 / 05期

关键词：

D O I：

10.1016/0022-2313(87)90209-2

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：269 / 273

页数：5

共 24 条

[1] SIMILARITY OF (GA, AL, AS) ALLOYS AND ULTRATHIN HETEROSTRUCTURES - ELECTRONIC-PROPERTIES FROM THE EMPIRICAL PSEUDOPOTENTIAL METHOD [J].

ANDREONI, W ;

CAR, R .

PHYSICAL REVIEW B, 1980, 21 (08) :3334-3344

[2]

Ashcroft N. W, 1976, SOLID STATE PHYS

[3] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

SHENG, TT ;

FELDMAN, LC ;

FIORY, AT ;

LYNCH, RT .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :102-104

[4] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[5] THE ROLE OF IMPURITIES IN REFINED ZNSE AND OTHER II-VI-SEMICONDUCTORS [J].

BHARGAVA, RN .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :15-26

[6] INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV [J].

DEAN, PJ ;

KAMINSKY, G ;

ZETTERSTROM, RB .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3551-+

[7] SELF-CONSISTENT ELECTRONIC-STRUCTURE OF SI, GE AND DIAMOND BY THE LMTO-ASA METHOD [J].

GLOTZEL, D ;

SEGALL, B ;

ANDERSEN, OK .

SOLID STATE COMMUNICATIONS, 1980, 36 (05) :403-406

[8] THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE [J].

GNUTZMAN.U ;

CLAUSECK.K .

APPLIED PHYSICS, 1974, 3 (01) :9-14

[9]

GOUDRY PL, 1982, J VAC SCI TECHNOL, V21, P475

[10] ELECTRON CORRELATION IN SEMICONDUCTORS AND INSULATORS - BAND-GAPS AND QUASI-PARTICLE ENERGIES [J].

HYBERTSEN, MS ;

LOUIE, SG .

PHYSICAL REVIEW B, 1986, 34 (08) :5390-5413

← 1 2 3 →