Temperature dependence of the threshold current and the lasing wavelength in 1.3-μm GaInNAs/GaAs single quantum well laser diode

被引：11

作者：

Kitatani, T ^{[1
]}

Kondow, M ^{[1
]}

Nakahara, K ^{[1
]}

Larson, MC ^{[1
]}

Uomi, K ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, RWCP Opt Interconnect Hitachi Lab, Tokyo 1858601, Japan

来源：

OPTICAL REVIEW | 1998年 / 5卷 / 02期

关键词：

semiconductor junction lasers; quantum well;

D O I：

10.1007/s10043-998-0069-x

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-mu m GaInNAs/GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/degrees C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.

引用

页码：69 / 71

页数：3

共 7 条

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