Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers

被引：38

作者：

Kondo, T ^{[1
]}

Schlenker, D ^{[1
]}

Miyamoto, T ^{[1
]}

Chen, ZB ^{[1
]}

Kawaguchi, M ^{[1
]}

Gouardes, E ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Microsyst Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 2A期

关键词：

GaInAs/GaAs; quantum well; semiconductor laser; highly strained; lifetime;

D O I：

10.1143/JJAP.40.467

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

in this study, we demonstrate a highly strained 1.21 mum GaInAs/GaAs quantum well laser which may be used in high-speed local area networks. Edge emitting lasers with either a GaInP or AlGaAs cladding layer have been fabricated. We have achieved a threshold current density as low as 170 A/cm(2) for GaInP-cladding-layer lasers and a high characteristic temperature To as high as 211 K from 30 degreesC to 120 degreesC for AlGaAs-cladding-layer lasers. The material gain coefficient go was estimated to be 1550 cm(-1) which is comparable to that of 0.98 mum GaInAs lasers. A preliminary lifetime test under heatsink-free CW condition was carried out, which shows no notable degradation after 300 h. We also demonstrated an AlAs oxide confinement laser in a 1.2 mum wavelength band.

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页码：467 / 471

页数：5

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