A 1.3-μm GaInNAs/GaAs single-quantum-well laser diode with a high characteristic temperature over 200 K

被引：92

作者：

Kitatani, T ^{[1
]}

Nakahara, K ^{[1
]}

Kondow, M ^{[1
]}

Uomi, K ^{[1
]}

Tanaka, T ^{[1
]}

机构：

[1] Hitachi Ltd, RWCP Opt Interconnect Hitachi Lab, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 2A期

关键词：

GaInNAs; semiconductor junction lasers; quantum wells; characteristic temperature;

D O I：

10.1143/JJAP.39.L86

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have obtained a high characteristic temperature (T-0) of 215 K from a 1.3 mu m GaInNAs/GaAs single-quantum-well laser under pulsed operation at 20 degrees C to 80 degrees C. To our knowledge, this To is the highest yet reported for 1.3 mu m band edge emitters suitable fur optical-fiber communication systems. The use of GaInNAs as an active layer is, therefore, very promising for the fabrication of long-wavelength laser diodes with excellent high-temperature performance.

引用

页码：L86 / L87

页数：2

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