High T0 (140K) and low threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates

被引：33

作者：

Otsubo, K

Shoji, H

Kusunoki, T

Suzuki, T

Uchida, T

Nishijima, Y

Nakajima, K

Ishikawa, H

机构：

[1] RWCP Opt Interconnect Fujitsu Lab, Atsugi, Kanagawa 24301, Japan

[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 21期

关键词：

semiconductor quantum wells; semiconductor junction lasers;

D O I：

10.1049/el:19971238

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained quantum well lasers emitting in the 1.2 mu m region have been fabricated on In0.22Ga0.78As ternary substrates. The threshold current density of the laser with highly reflective facets is 176 A/cm(2) at 20 degrees C. The characteristic temperature (T-0) of the device has reached 140 K, which is the highest value ever reported for long-wavelength semiconductor lasers.

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页码：1795 / 1797

页数：3

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