In0.38Ga0.62As/InAlGaAs/InGaP strained double quantum well lasers on In0.21Ga0.79As ternary substrate

An ln(0.21)Ga(0.79)As ternary substrate has been fabricated using a newly developed multicomponent zone-growth method, and In0.38Ga0.62As/InAlGaAs/InGaP strained double quantum well lasers have been fabricated on the ternary substrate. Room temperature cw operation at a lasing wavelength longer than 1.2 mu m has been achieved on the ternary substrate for the first time. The lasers exhibited a low threshold current density of 280 A/cm(2) and a characteristic temperature of 84 K, which were close to the designed values. It is also shown that the use of a wider band-gap barrier would enable a characteristic temperature higher than 150 K.