Continuous-wave operation of 1.30μm GaAsSb/GaAs VCSELs

被引：62

作者：

Anan, T

Yamada, M

Nishi, K

Kurihara, K

Tokutome, K

Kamei, A

Sugou, S

机构：

[1] Real World Comp Partnership, Opt Interconnect NEC Lab, Tsukuba, Ibaraki 3058501, Japan

[2] NEC Corp Ltd, Syst Devices & Fundamental Res, Tsukuba, Ibaraki 3058501, Japan

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 09期

关键词：

D O I：

10.1049/el:20010405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1.30 mum VCSELs using GaAsSb quantum wells, which operate continuous-wave at and above room temperature (RT), are reported. A threshold current as low as 1.2mA at RT and a maximum CW operating temperature of 70 degreesC are demonstrated.

引用

页码：566 / 567

页数：2

共 9 条

[1] Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm [J].

Choquette, KD ;

Klem, JF ;

Fischer, AJ ;

Blum, O ;

Allerman, AA ;

Fritz, IJ ;

Kurtz, SR ;

Breiland, WG ;

Sieg, R ;

Geib, KM ;

Scott, JW ;

Naone, RL .

ELECTRONICS LETTERS, 2000, 36 (16) :1388-1390

[2] Continuous-wave operation of single-transverse-mode 1310-nm VCSELs up to 115 °C [J].

Jayaraman, V ;

Goodnough, TJ ;

Beam, TL ;

Ahedo, FM ;

Maurice, RA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (12) :1595-1597

[3] InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3μm [J].

Lott, JA ;

Ledentsov, NN ;

Ustinov, VM ;

Maleev, NA ;

Zhukov, AE ;

Kovsh, AR ;

Maximov, MV ;

Volovik, BV ;

Alferov, ZI ;

Bimberg, D .

ELECTRONICS LETTERS, 2000, 36 (16) :1384-1385

[4] Room temperature operation of GaAsSb/GaAs quantum well VCSELs at 1.29μm [J].

Quochi, F ;

Cunningham, JE ;

Dinu, M ;

Shah, J .

ELECTRONICS LETTERS, 2000, 36 (25) :2075-2076

[5] Continuous wave operation of 1.26μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition [J].

Sato, S ;

Nishiyama, N ;

Miyamoto, T ;

Takahashi, T ;

Jikutani, N ;

Arai, M ;

Matsutani, A ;

Koyama, F ;

Iga, K .

ELECTRONICS LETTERS, 2000, 36 (24) :2018-2019

[6] Effect of surface quality on overgrowth of highly strained GaInAs/GaAs quantum wells and improvement by a strained buffer layer [J].

Schlenker, D ;

Pan, Z ;

Miyamoto, T ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9A) :5023-5027

[7]

SCHLENKER D, 2000, 10 INT C MET VAP PHA, P230

[8] Monolithic VCSEL with InGaAsN active region emitting at 1.28μm and CW output power exceeding 500μW at room temperature [J].

Steinle, G ;

Riechert, H ;

Egorov, AY .

ELECTRONICS LETTERS, 2001, 37 (02) :93-95

[9] Room temperature low-threshold CW operation of 1.23μm GaAsSbVCSELs on GaAs substrates [J].

Yamada, M ;

Anan, T ;

Kurihara, K ;

Nishi, K ;

Tokutome, K ;

Kamei, A ;

Sugou, S .

ELECTRONICS LETTERS, 2000, 36 (07) :637-638

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