Room temperature operation of GaAsSb/GaAs quantum well VCSELs at 1.29μm

被引：14

作者：

Quochi, F ^{[1
]}

Cunningham, JE ^{[1
]}

Dinu, M ^{[1
]}

Shah, J ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Holmdel, NJ 07733 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 25期

关键词：

Compendex;

D O I：

10.1049/el:20001469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature pulsed lasing at 1.29 mum in an optically pumped GaAsSb/GaAs quantum well VCSEL on a GaAs substrate is reported. This is the longest wavelength VCSEL reported in this material system.

引用

页码：2075 / 2076

页数：2

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