Low-threshold operation of 1.3-μm GaAsSb quantum-well lasers directly grown on GaAs substrates

被引：43

作者：

Yamada, M ^{[1
]}

Anan, T ^{[1
]}

Tokutome, K ^{[1
]}

Kamei, A ^{[1
]}

Nishi, K ^{[1
]}

Sugou, S ^{[1
]}

机构：

[1] NEC Corp Ltd, High Frequency Device Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 07期

关键词：

quantum-well lasers; semiconductor growth; semiconductor lasers; strain;

D O I：

10.1109/68.853496

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAsSb quantum-well (QW) edge-emitting lasers grown on GaAs substrates were demonstrated. The optical quality of the QW was improved by optimizing the growth conditions and introducing multi-QW to increase gain. As a result, 1.27-mu m lasing of a GaAs0.66Sb0.34-GaAs double-QW laser was obtained with a Low-threshold current density of 440 A/cm(2), which is comparable to that in conventional InP-based long-wavelength lasers, 1.30 mu m lasing with a threshold current density of 770 A/cm(2) was also obtained by increasing the antimony content to 0.36, GaAsSb QW was found to be a suitable material for use in the active layer of 1.3-mu m vertical-cavity surface-emitting lasers.

引用

页码：774 / 776

页数：3

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