Electronic structure of GaSb/GaAs quantum domes

被引：21

作者：

North, SM ^{[1
]}

Briddon, PR ^{[1
]}

Cusack, MA ^{[1
]}

Jaros, M ^{[1
]}

机构：

[1] Univ Newcastle Upon Tyne, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.58.12601

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent experimental results indicate that the conduction-band offset in GaSb/GaAs quantum dots is much smaller than previously thought. We have modeled the electronic structure of self-assembled GaSb/GaAs dots and established good contact with experimental photoluminescence spectra. However, it appears that the standard picture of confinement is not adequate to fully account for the: data and offer guidelines for fresh experimentation. [S0163-1829(98)00343-9].

引用

页码：12601 / 12604

页数：4

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