Room-temperature electroluminescence from Si/Ge/Si1-xGex quantum-well diodes grown by molecular-beam epitaxy

被引：33

作者：

Presting, H

Zinke, T

Splett, A

Kibbel, H

Jaros, M

机构：

[1] TECH UNIV BERLIN, SECT ELECT ENGN, D-10587 BERLIN, GERMANY

[2] UNIV NEWCASTLE UPON TYNE, DEPT PHYS, NEWCASTLE UPON TYNE NE1 7RU, TYNE & WEAR, ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 16期

关键词：

D O I：

10.1063/1.117642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunable room-temperature electroluminescence, photocurrent, and photoluminescence in the near infrared (lambda-1.3 mu m) has been observed from Ge/Si/Ge/Si1-xGex quantum-well (QW) diodes grown by molecular-beam epitaxy. The QWs are grown on a p(+)-doped (100)-Si substrate and consist of two thin Ge wells separated by a thicker Si middle layer, and the whole structure is embedded by two S0.85Ge0.15 ahoy layers. Our theoretical analysis of the data suggests that the strength of the spectra is linked to states localized at the interface. (C) 1996 American Institute of Physics.

引用

页码：2376 / 2378

页数：3

共 20 条

[1] X-ray reciprocal space mapping of Si/Si1-xCex heterostructures
Bauer, G
Li, JH
Koppensteiner, E
[J]. JOURNAL OF CRYSTAL GROWTH, 1995, 157 (1-4) : 61 - 67
[2] ELECTROLUMINESCENCE AT ROOM-TEMPERATURE OF A SINGEM STRAINED-LAYER SUPERLATTICE
ENGVALL, J
OLAJOS, J
GRIMMEISS, HG
PRESTING, H
KIBBEL, H
KASPER, E
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (04) : 491 - 493
[3] ROOM-TEMPERATURE PHOTOLUMINESCENCE OF GEMSINGEM STRUCTURES
GAIL, M
ABSTREITER, G
OLAJOS, J
ENGVALL, J
GRIMMEISS, H
KIBBEL, H
PRESTING, H
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (22) : 2978 - 2980
[4] GAIL M, COMMUNICATION
[5] THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE
GNUTZMAN.U
CLAUSECK.K
[J]. APPLIED PHYSICS, 1974, 3 (01): : 9 - 14
[6] JAROS M, 1990, SEMICONDUCT SEMIMET, V32, P175
[7] LOCALIZATION AT IMPERFECT INTERFACES AND ITS ROLE IN OPTICAL-SPECTRA OF QUANTUM-WELL STRUCTURES
JAROS, M
BEAVIS, AW
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (05) : 669 - 671
[8] SURFACE SEGREGATION OF SB ON SI(100) DURING MOLECULAR-BEAM EPITAXY GROWTH
JORKE, H
[J]. SURFACE SCIENCE, 1988, 193 (03) : 569 - 578
[9] STRAIN ADJUSTMENT IN ULTRA THIN SI/GE SUPERLATTICES
KASPER, E
KIBBEL, H
PRESTING, H
[J]. THIN SOLID FILMS, 1989, 183 : 87 - 93
[10] HIGH-SPEED INTEGRATED-CIRCUIT USING SILICON MOLECULAR-BEAM EPITAXY (SI-MBE)
KASPER, E
WORNER, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) : 2481 - 2486

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