STRAIN ADJUSTMENT IN ULTRA THIN SI/GE SUPERLATTICES

[1] THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE [J]. APPLIED PHYSICS, 1974, 3 (01): : 9 - 14

[2] HIGH-SPEED INTEGRATED-CIRCUIT USING SILICON MOLECULAR-BEAM EPITAXY (SI-MBE) [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) : 2481 - 2486

[3] AN INDUSTRIAL SINGLE-SLICE SI-MBE APPARATUS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) : 1154 - 1158

[4] SYMMETRICALLY STRAINED SI/GE SUPERLATTICES ON SI SUBSTRATES [J]. PHYSICAL REVIEW B, 1988, 38 (05): : 3599 - 3601

[5] GROWTH AND PROPERTIES OF SI/SIGE SUPERLATTICES [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 630 - 639

[6] KASPER E, 1988, MATER RES SOC S P, V102, P393

[7] MENDESZ EE, 1987, PHYSICS APPLICATIO B, V170, P101

[8] STRUCTURALLY INDUCED OPTICAL-TRANSITIONS IN GE-SI SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (07) : 729 - 732

[9] Tung R.T., 1988, SILICON MOL BEAM EPI, V2, P13

[10] ZACHAI R, 1988, 19TH P ICPS WARSH

[1] THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE [J]. APPLIED PHYSICS, 1974, 3 (01): : 9 - 14

[2] HIGH-SPEED INTEGRATED-CIRCUIT USING SILICON MOLECULAR-BEAM EPITAXY (SI-MBE) [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) : 2481 - 2486

[3] AN INDUSTRIAL SINGLE-SLICE SI-MBE APPARATUS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) : 1154 - 1158

[4] SYMMETRICALLY STRAINED SI/GE SUPERLATTICES ON SI SUBSTRATES [J]. PHYSICAL REVIEW B, 1988, 38 (05): : 3599 - 3601

[5] GROWTH AND PROPERTIES OF SI/SIGE SUPERLATTICES [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 630 - 639

[6] KASPER E, 1988, MATER RES SOC S P, V102, P393

[7] MENDESZ EE, 1987, PHYSICS APPLICATIO B, V170, P101

[8] STRUCTURALLY INDUCED OPTICAL-TRANSITIONS IN GE-SI SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1987, 58 (07) : 729 - 732

[9] Tung R.T., 1988, SILICON MOL BEAM EPI, V2, P13

[10] ZACHAI R, 1988, 19TH P ICPS WARSH