HIGH-SPEED INTEGRATED-CIRCUIT USING SILICON MOLECULAR-BEAM EPITAXY (SI-MBE)

被引：28

作者：

KASPER, E ^{[1
]}

WORNER, K ^{[1
]}

机构：

[1] TELEFUNKEN ELECTR GMBH, D-7100 HEILBRONN, FED REP GER

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 10期

关键词：

D O I：

10.1149/1.2113604

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2481 / 2486

页数：6

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