Continuous wave operation of 1.26μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition

被引：62

作者：

Sato, S

Nishiyama, N

Miyamoto, T

Takahashi, T

Jikutani, N

Arai, M

Matsutani, A

Koyama, F

Iga, K

机构：

[1] Ricoh Co Ltd, Res & Dev Grp, Ctr Res & Dev, Natori, Miyagi 9811241, Japan

[2] Tokyo Inst Technol, Precis & Intelligence Lab, Microsyst Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 24期

关键词：

D O I：

10.1049/el:20001430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrically pumped near 1.3 mum GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition are demonstrated for the first time. The threshold current and voltage under continuous wave operation of a 10 x 10 mum(2) oxide aperture device were 7.6mA and 2.8V, respectively. The output power exceeded 0.1mW and the slope efficiency was similar to0.1W/A.

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页码：2018 / 2019

页数：2

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