Low threshold and high characteristic temperature 1.3 μm range GaInNAs lasers grown by metalorganic chemical vapor deposition

被引：64

作者：

Sato, S ^{[1
]}

机构：

[1] Ricoh Co Ltd, Ctr Res & Dev, Natori, Miyagi 9811241, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 6A期

关键词：

GaInNAs; GaAs substrate; quantum well; semiconductor laser; long wavelength; metalorganic chemical vapor deposition; strain; characteristic temperature;

D O I：

10.1143/JJAP.39.3403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly strained 1.3 mu m range GaZnNAs/GaAs double quantum-well lasers grown by metalorganic chemical vapor deposition are demonstrated. A high characteristic temperature of 205 K (22-80 degrees C) was obtained with a low threshold current density of 0.92 kA/cm(2) (22 degrees C) in a broad stripe laser. The highest lasing operation temperature of 170 degrees C, and continuous-wave operation with a low threshold current of 27 mA were also obtained in a 7.5-mu m-wide ridge-stripe laser. The GaInNAs/GaAs material system is very promising for next-generation long-wavelength lasers.

引用

页码：3403 / 3405

页数：3

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