A 1.3-μm GaInNAs laser diode with a lifetime of over 1000 hours

被引：88

作者：

Kondow, M ^{[1
]}

Kitatani, T ^{[1
]}

Nakahara, K ^{[1
]}

Tanaka, T ^{[1
]}

机构：

[1] Hitachi Ltd, RWCP Optoelect Hitachi Lab, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 12A期

关键词：

1.3-mu m range; GaInNAs; laser diode; reliability; 1000; hours;

D O I：

10.1143/JJAP.38.L1355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 1.3-mu m-range GaInNAs/GaAs single-quantum-well laser was tested for 1000 hours at 24 degrees C under an auto-current-control condition. No degradation was observed. The threshold current fell slightly (14%). The lasing wavelength was stable. The lack of rapid degradation under an auto-power-control condition at a high temperature (50 degrees C) suggests that a reliable GaInNAs laser diode with a practical lifetime may soon be realized.

引用

页码：L1355 / L1356

页数：2

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